Wafer inspection device and semiconductor wafer inspection method using the same

ABSTRACT

A wafer inspection device, which inspects the electrical properties of a semiconductor wafer on which a semiconductor integrated circuit is formed, and the wafer inspection device has: a holding mechanism for holding a probe card; a wafer stage that holds the semiconductor wafer on the upper surface and is movably provided; and a pressing mechanism that are held and press the wafer stage against the probe card. The wafer stage is provided on the outer periphery with a seal ring. The seal ring forms a sealed space in a state where the wafer and the probe card are brought close to each other by contacting the probe card and is provided in such a manner as to reduce the pressure of the sealed space.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to Japanese Patent Application No.2009-244046 filed on Oct. 23, 2009, the disclosure of which includingthe specification, the drawings, and the claims is hereby incorporatedby reference in its entirety.

BACKGROUND

The present invention relates to a wafer inspection device that performselectrical inspection of a wafer on which a plurality of semiconductorintegrated circuit devices are formed and a semiconductor waferinspection method using the same. In particular, the present inventionrelates to a wafer inspection device that performs electrical inspectionby pressing a probe card for inspection against a wafer and asemiconductor wafer inspection method using the same.

During manufacturing of a semiconductor integrated circuit, a pluralityof semiconductor integrated devices (chips) are simultaneously formedthrough a diffusion process performed to a semiconductor wafer. However,in the manufacturing process, all the plurality of chips simultaneouslymanufactured are usually difficult to be made non-defective articles dueto various factors, such as dust. Therefore, the plurality of chipssimultaneously manufactured on a wafer need to be individually inspectedin a wafer level whether or not each chip is non-defective before thechips are separated and assembled. For the inspection, a probe cardhaving a contact terminal to be electrically connected to one or aplurality of chips on a wafer and an inspection device, referred to as aprober, that conveys the wafer, aligns the same with the probe card, andthen presses the wafer against the probe card are used (Japanese PatentPublication No. 2003-59986).

In recent years, due to an improvement of a device for performingelectrical inspection, referred to as a tester, that generates a powersupply or electrical signals, transmits the power supply and the signalsto a wafer, and processes the signals returned from the wafer, a largernumber of semiconductor chips can be inspected at once and a probe cardfor collectively and simultaneously inspecting wafers has also beenincreasingly supplied.

However, with an increase in the number of chips to be simultaneouslyinspected, a higher force for pressing a wafer against a probe card isrequired. The pressing force is obtained by rotating a ball screw by astepping motor or the like, and there is a limitation in the force witha single mechanism. In usual, 2 to 4 stepping motors are provided, butthere is a limitation in increasing the number of the stepping motorsalso in terms of an area for providing the same. The probe card to bepressed is required to maintain the degree of flatness with areinforcing plate in such a manner as not to be curved by the pressingforce (e.g., Nicolas Salles, Wayne Nelson, “Reinforcement of PCB usingAdvanced Stiffeners for High Pin Count Devices” IEEE Semiconductor WaferTest Workshop 2007, Session 4-2, June, 2007, Internet<URL:http://www.swtest.org/swtw_library/2007proc/PDF/S04_(—)02_Salles_SWTW2007.pdf>. Moreover, with an increase inthe number of chips to be simultaneously inspected, the area of thecontact terminal of a probe card inevitably increases, and thus thedegree of parallelism of the probe card and the wafer is also important.When the degree of parallelism thereof fluctuates, so-called unevencontact makes it difficult to achieve uniform contact on the entiresurface (e.g., Sunil Wijeyesekera, Makarand Shinde, “One Touch 300 mmWafer Probing” IEEE Semiconductor Wafer Test Workshop 2006, Session 5-2,June, 2006, Internet <URL:http://www.swtest.org/swtw_library/2006proc/PDF/S05_(—)01_Wijeyesekera.pdf>. As a method for solving theproblem, a method for obtaining a load value by a differential pressurewith the atmospheric pressure using a wafer tray is disclosed inJapanese Patent Publication No. 08-5666.

SUMMARY

However, according the method including pressing a probe card against asemiconductor wafer by a differential pressure with the atmosphericpressure using a former wafer tray, it becomes difficult to obtain apressing force of 100 kPa or more which is the differential pressurebetween the atmospheric pressure and vacuum. When a wafer stage (waferchuck) is brought close to a probe card, the interval between the waferand the probe card becomes small, thus, the pressure of a sealed spaceincreases, and a seal ring forming the sealed space is pushed out. Thus,a thin film substrate (membrane) forming a probe card and provided witha contact terminal is pushed out in the outer circumferential direction,which causes a problem in that the contact terminal on the thin filmsubstrate causes position shift between the contact terminal and thewafer.

Therefore, it is required to, for example, limit the number ofelectrodes of the contact terminal to be brought into contact with thewafer or gradually bring the wafer close to the probe card whilereducing a rate of bringing the wafer close to the probe card andreducing the pressure inside the sealed space.

In view of the above-described problems, it is an object of the presentinvention to achieve pressing a probe card to a wafer by a pressingforce equal to or higher than the atmospheric pressure and promptlypressing the wafer into contact with the probe card.

In order to achieve the above-described object, the present inventionconstitutes a wafer inspection device to have a structure such that asealed space is formed between a wafer holding table and a probe card bya seal ring provided in the outer periphery of the wafer stage and thepressure of the formed sealed space is reduced comparing with theatmospheric pressure.

Specifically, a first wafer inspection device according to the presentinvention is directed to a wafer inspection device that inspects theelectrical properties of a semiconductor wafer on which a semiconductorintegrated circuit is formed, and the first wafer inspection device has:a holding mechanism for holding a probe card that performs electricalinspection for the semiconductor wafer; a wafer stage that holds thesemiconductor wafer on the upper surface and is movably provided; and apressing mechanism that aligns the probe card and the semiconductorwafer that are held and press the wafer stage against the probe card, inwhich, the wafer stage is provided on the outer periphery with a sealring that forms a sealed space between the wafer stage and the probecard; and the seal ring forms the sealed space in a state where thewafer and the probe card are brought close to each other by contactingthe probe card and is provided in such a manner as to reduce thepressure of the sealed space.

According to the first wafer inspection device, by reducing the pressureof the sealed space formed by the wafer stage, the seal ring provided onthe outer periphery of the wafer stage, and the probe card, the probecard can be certainly pressed against the semiconductor wafer due to adifferential pressure with the atmospheric pressure.

In the first wafer inspection device, the wafer stage preferably has apressing force of 100 kg or higher.

Thus, in addition to the load due to the differential pressure with theatmospheric pressure, a pressing force by the wafer stage is also added,and thus the probe card can be pressed against the semiconductor waferwith a higher load.

In the first wafer inspection device, the seal ring is preferablymovably provided on the wafer stage in a direction perpendicular to theprincipal surface of the probe card.

Thus, bringing the semiconductor wafer close to the probe card, theformation of the sealed space, the reduction in the pressure of thesealed space can be individually performed at an independent timing.Thus, the pressing force due to the differential pressure with theatmospheric pressure can be more rapidly obtained. The load force of thewafer stage in this case may be a load force sufficient for bringing thesemiconductor wafer close to the probe card.

In this case, the movable range of the seal ring may be in the range ofa position spaced apart in the direction toward the side opposite to theprobe card relative to the semiconductor wafer and a position closer tothe probe card than the semiconductor wafer in the wafer stage.

Thus, during alignment of the probe card and the semiconductor wafer,the seal ring can be prevented from interfering with a sensor formeasuring the height of the semiconductor wafer, a camera for detectingthe position of a pad electrode formed on the semiconductor wafer, orthe like.

In the first wafer inspection device, the seal ring may be movablyprovided according to the inclination of the principal surface of theprobe card and may be movably provided also in a direction perpendicularto the principal surface of the probe card in such a manner as to beadhered to the probe card due to the differential pressure between thepressure of the sealed space and the atmospheric pressure of the outsideof the sealed space by reducing the pressure of the sealed space.

Thus, even when the probe card is held with slight inclination, thesealed space can be formed without difficulty and, when the sealed spaceis formed, the pressure of the sealed space can be prevented fromincreasing due to bringing the semiconductor wafer close to the probecard. In addition, since it moves to the optimal position with thereduction in the pressure, alignment shift due to forced pressing in anuneven contact state and an increase in the internal pressure can beprevented and a pressing force can be rapidly obtained.

The first wafer inspection device further has a wafer tray removablyprovided on the wafer stage, in which the seal ring may be returnablyprovided at a position spaced apart from the probe card on the waferstage.

Thus, after the completion of the alignment of the probe card and thesemiconductor wafer, the semiconductor wafer that is aligned with theprobe card can be moved with the wafer tray to another inspectiondevice, and another inspection can be performed. Therefore, not onlythat the inspection can be carried out on a higher-functionaltemperature adjustment system but also that the operating ratio of theinspection device can be increased.

A second wafer inspection device according to the present invention isdirected to a wafer inspection device that inspects the electricalproperties of a semiconductor wafer on which a semiconductor integratedcircuit is formed using a probe card, in which the probe card has a thinfilm substrate on which an electrode for contact and a non-contact probepattern using capacitive coupling or inductive coupling are formed andis formed so that the pressure of a first sealed space constituted bymutually facing surfaces of the probe card and the thin film substratecan be controlled; and the second wafer inspection device has: a waferstage that holds the semiconductor wafer on the upper surface and ismovably provided; and a mechanism for aligning the probe card and thesemiconductor wafer, in which, the wafer stage is provided on the outerperiphery with a seal ring that forms a second sealed space between thethin film substrate and the semiconductor wafer by bringing thesemiconductor wafer close to the probe card or pressing thesemiconductor wafer close against the probe card; and the pressure ofthe first sealed space and the pressure of the second sealed space canbe independently reduced.

According to the second wafer inspection device, also when a probe cardhaving a thin film substrate on which a non-contact probe pattern usingcapacitive coupling or an inductive coupling is formed is used as theprobe card, the probe card can be certainly pressed against thesemiconductor wafer by a differential pressure of the atmosphericpressure.

The second wafer inspection device may further have a pressureshort-circuiting switch mechanism that makes the pressure of the firstsealed space and the pressure of the second sealed space the same; and aplurality of pressure control valves that independently control each ofthe first sealed space and second sealed space.

In this case, among the plurality of the pressure control valves, thepressure control valve connected to the first sealed space may controlthe pressure of the first sealed space in such a manner as to make thepressure of the first sealed space and the pressure of the second sealedspace different from each other.

A semiconductor wafer inspection method according to the presentinvention is directed to a semiconductor wafer inspection method forinspecting the electrical properties of a semiconductor wafer on which asemiconductor integrated circuit is formed using a probe card, and thesemiconductor wafer inspection method includes the steps of: (a) holdingthe semiconductor wafer on a wafer stage; (b) aligning each electrode ofthe semiconductor wafer and the probe card after the step (a); (c)bringing the semiconductor wafer close to the probe card or pressing thesemiconductor wafer against the probe card after the step (b); (d)bringing a seal ring provided on the outer periphery of the wafer stageinto contact with the wafer stage in or after the step (c) to form asealed space defined by at least the probe card, the upper surface ofthe wafer stage, and the seal ring; and (e) reducing the pressure of thesealed space after the step (d).

According to the semiconductor wafer inspection method of the presentinvention, due to a differential pressure with the atmospheric pressuregenerated by reducing the pressure of the sealed space formed by thewafer stage, the seal ring provided on the outer periphery of the waferstage, and the probe card, the probe card can be certainly pressedagainst the semiconductor wafer.

As described above, according to the wafer inspection device accordingto the present invention and the semiconductor wafer inspection methodusing the same, when electrical inspection of the semiconductor wafer isperformed using the probe card having a contact terminal, the probe cardcan be pressed against the semiconductor wafer with a pressing forceequal to or higher than the atmospheric pressure without causingposition shift and the semiconductor wafer and the probe card can berapidly pressed into contact with each other.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross sectional view of a wafer holding portion ofa wafer inspection device according to a first example embodiment.

FIG. 2 is a schematic cross sectional view of a state where a sealedspace is formed between a probe card and a wafer, which is the waferholding portion of the wafer inspection device according to the firstexample embodiment.

FIG. 3 is a schematic cross sectional view of a wafer holding portion ofa wafer inspection device according to a second example embodiment.

FIG. 4 is a schematic cross sectional view of a wafer holding portion ofa wafer inspection device according to a first modification of thesecond example embodiment.

FIG. 5 is a flow chart of a semiconductor wafer inspection method in thecase of using the probe cards according to the first and second exampleembodiments.

FIG. 6 is a schematic partial cross sectional view of a probe card foruse in a wafer inspection device according to a third exampleembodiment.

FIG. 7 is a schematic cross sectional view of an internal pressureregulating mechanism of the wafer inspection device according to thethird example embodiment.

FIG. 8 is a schematic cross sectional view of an internal pressureregulating mechanism of a wafer inspection device according to a firstmodification of the third example embodiment.

DETAILED DESCRIPTION First Example Embodiment

A wafer inspection device according to a first example embodiment willbe described with reference to FIG. 1.

As shown in FIG. 1, a wafer inspection device 1 according to the firstexample embodiment has a wafer stage 11, an annular seal ring holdingmember 12 provided on the upper portion of the wafer stage 11 and on theouter periphery thereof and containing a rigid material, and a seal ring13 formed on the seal ring holding member 12 and containing an elasticmaterial.

The seal ring holding member 12 is provided with an internal pressureregulating pipe 14 penetrating in the front-to-back direction and apressure regulating valve (not shown) for regulating the internalpressure is connected to the end opposite to the seal ring holdingmember 12 in the pressure regulating pipe 14.

The wafer stage 11 is fixed on a pressing mechanism 2 with a screw orthe like and is placed on a stage (not shown) movably provided in the XYdirection. The pressing mechanism 2 contains a moving unit 21, a guidingunit 22, a ball screw 23, a nut 24, a motor unit 25, a ball bearing 26,and the like. The moving unit 21 connected to the wafer stage 11 throughan intermediate member 3 and removably fixed with a bolt or the like isformed in a circular shape in which a ring-shaped hollow portion 21 a isformed at the center. From the undersurface of the moving unit 21, acylindrical member 27 accommodating the ball screw 23 is downwardly andvertically formed. The number of the cylindrical members 27 are two ormore and preferably two to four, and the cylindrical members 27 areprovided at the same interval in the circumferential direction of themoving unit 21. Thus, the wafer stage 11 can be prevented fromvertically moving and from inclining due to an uneven contact pressureduring the inspection. In the cylindrical member 27, the ball screw 23connected to the motor unit 25 by a belt or coupling is accommodated andthe nut 24 provided at the lower end portion of the cylindrical member27 is engaged with the ball screw 23.

On the outer periphery of the cylindrical member 27, the guiding unit 22having a cylindrical shape is provided and the ball bearing 26 isdisposed between the cylindrical member 27 and the guiding unit 22.Thus, the ball screw 23 rotates by driving the motor unit 25 which is apulse motor, and the cylindrical member 27 to which the nut 24 isattached is guided by the guiding unit 22 and vertically moves. Here,the moving unit 21 to which the cylindrical member 27 is fixed and thewafer stage 11 vertically move. Two or more of the motor units 25 aredriven in a synchronized manner. The two or more of the motor units 25may be driven in a synchronized manner by connecting one motor by a beltand rotating the ball screw 23.

The wafer inspection device 1 containing the wafer stage 11 has a probecard holding mechanism 42, to which the probe card 4 can be attached andheld.

The seal ring holding member 12 is preferably formed with a materialhaving a small heat capacity and a low thermal conductivity, such aszirconia (zirconium oxide). Thus, when the temperature of the wafer 5 isadjusted through the wafer stage 11, the heat resistance of the wholewafer stage 11 is not increased and the heat capacity is not increased.The seal ring holding member 12 may be adhered to the wafer stage 11 toseal the space therebetween. For example, it is preferable that the sealring holding member 12 be removably assembled and the space with thewafer stage 11 be sealed with an O ring or the like so that the air doesnot leak.

For materials forming the seal ring 13, fluorine rubber materials arepreferably used instead of silicone rubber generating silicon oxidecompounds, such as siloxane. Thus, when the sealed space formed by thewafer stage 11, the probe card 4, and the seal ring 13 is opened, theseal ring 13 adheres to the probe card 4 to avoid various problems. Thecross sectional shape of the seal ring 13 in the direction perpendicularto the upper surface of the wafer stage 11 is preferably a shape inwhich a blade spreads outside, i.e., a bellows type. Thus, the tipportion of the blade is pressed against the probe card 4 by thedifferential pressure between the pressure of the sealed space and theatmospheric pressure of the outside thereof, and the sealing propertiesof the seal ring 13 increase.

The probe card 4 may be reinforced by a reinforcing plate 43 or the likein order to maintaining the degree of flatness and prevent distortiondue to the pressing force of the pressing mechanism 2.

With the structures, the wafer stage 11 is aligned with the plurality ofthe contact terminals 41 formed on the probe card 4 after placing thewafer 5, and then can be pressed against the probe card 4.

Thus, as shown in FIG. 2, the sealed space 44 is formed by the waferstage 11, the seal ring 13 provided on the outer periphery of the waferstage 11, and the probe card 4. By reducing the pressure of the formedsealed space 44 through the internal pressure regulating pipe 14, theprobe card 4 is pressed against the wafer 5 with a higher force by thedifferential pressure between the pressure of the sealed space 44 andthe atmospheric pressure of the outside thereof.

In usual, with respect to the pressing force by the pressing mechanism2, a pressing force of from 100 kg to about 400 kg can be obtained witha wafer prober having a diameter of 300 mm. In addition thereto, whenthe differential pressure with the atmospheric pressure is used, apressing force of 700 kg or higher can be obtained similarly using thewafer having a diameter of 300 mm. This is determined by multiplying thedifferential pressure (100 kPa) when the inside of the sealed space 44is exhausted by the area (150 mm×150 mm×π (the ratio of thecircumference of a circle to its diameter) of the diameter of 300 mm ofthe wafer 5. Accordingly, a load of about 800 kg to about 1100 kg intotal can be obtained. Supposing that the contact terminal 41 canachieve electrical contact with an aluminum electrode on the wafer 5with a load of 2.5 g, the load indicates that electrodes with about440,000 terminals can be simultaneously electrically connected to thewafer 5.

As described above, according to the first example embodiment, since thepressure of the sealed space 44 between the probe card 4 and the waferstage 11 formed by the seal ring holding member 12 provided on the upperportion of the wafer stage 11 and the outer periphery thereof and theseal ring 13 provided on the upper surface of the seal ring holdingmember 12 is reduced, the probe card 4 can be pressed against the wafer5 with a pressing force equal to or higher than the atmosphericpressure, and it is prevented that the pressure of the sealed space 44increases to push out the seal ring 13 for forming the sealed space 44.As a result, since the contact terminal 41 formed on the probe card 4 isnot pushed out in the outer circumferential direction, the positionshift particularly between the contact terminal formed on the peripheralportion of the probe card 4 and the electrode formed on the wafer 5.

Second Example Embodiment

Hereinafter, a wafer inspection device according to a second exampleembodiment will be described with reference to FIG. 3. In FIG. 3, thesame components are designated by the same reference characters as thosein FIG. 1.

As shown in FIG. 3, the wafer inspection device 1 according to thesecond example embodiment has the wafer stage 11, the annular seal ringholding member 12 provided on the upper portion of the wafer stage 11and the outer periphery thereof and containing a rigid material, and theseal ring 13 formed on the seal ring holding member 12 and containing anelastic material.

The seal ring holding member 12 is provided with the internal pressureregulating pipe 14 penetrating the member and a pressure regulatingvalve (not shown) for regulating the internal pressure is connected tothe end opposite to the seal ring holding member 12 in the pressureregulating pipe 14.

Here, as a feature of the second example embodiment, the wafer stage 11has, on a side surface, a seal ring driving mechanism 15 that can movethe seal ring holding member 12 in the direction perpendicular to theprincipal surface of the probe card 4 attached to the probe card holdingmechanism 42. Here, the seal ring driving mechanism 15 is preferablyprovided at three or more portions around the wafer stage 11. At thefarthest position from the probe card 4, the tip portion of the sealring 13 is preferably positioned below the principal surface of thewafer 5. Thus, interfering with various sensors can be prevented duringalignment of the wafer 5.

In a mechanism of driving the wafer stage 11 in the Z direction(direction perpendicular to the wafer holding surface), driving by thestepping motor 25 or the like as in the first example embodiment is notnecessarily required. The mechanism may be acceptable insofar as theweight of the wafer stage 11, the wafer 5, or the like can be operatedand may be an approaching mechanism portion 2A using an air cylinder 7or a combination thereof.

The seal ring driving mechanism 15 is preferably a double-acting typeair cylinder and, more preferably, the driving air pressure can beadjusted. By suitably adjusting the air pressure, the effect ofpreventing the seal ring 13 from being excessively strongly pressedagainst the probe card 4 can be obtained. Also when the wafer 5 israpidly brought close to or pressed against the probe card 4, the sealring holding member 12 is returned in the direction in which the sealring holding member 12 separates from the probe card 4. Therefore, thereis an effect that it is prevented that the sealed space formed by thewafer stage 11, the probe card 4, and the seal ring 13 is rapidlycompressed to temporarily increase the internal pressure. In contrast,with the reduction in the internal pressure of the sealed space, theseal ring holding member 12 is brought close to the probe card 4. Thus,unlike a former technique of pressing the seal ring 13 against the probecard 4 by mechanical force, the seal ring 13 can be held at the positionin equilibrium with a given repulsive force by the seal ring 13.

The seal ring holding member 12 slides on the outer periphery of thewafer stage 11 while maintaining airtightness. Therefore, the inside ofthe seal ring holding member 12 and the outer peripheral surface of thewafer stage 11 preferably secure airtightness with an elastic materialof an O ring 16 or the like. In this case, the surface of the O ring 16is more preferably processed with a fluororesin, such as Teflon(registered trademark). Thus, the O ring 16 is easy to slide and becomesdifficult to wear.

As described above, according to the second example embodiment, sincethe seal ring holding member 12 holding the seal ring 13 on the upperportion of the wafer stage 11 and on the outer periphery thereof isslidably provided, bringing the probe card 4 close to the semiconductorwafer 5, the formation of the sealed space, and the reduction in thepressure of the sealed space can be individually performed at anindependent timing. Therefore, the pressing force by the differentialpressure with the atmospheric pressure can be more rapidly obtained.

First Modification of Second Example Embodiment

FIG. 4 shows a first modification of the second example embodiment.

As shown in FIG. 4, in the wafer inspection device 1 according to thismodification, a removable wafer tray 6 can be placed on the wafer stage11.

Here, the seal ring holding member 12 holding the seal ring 13 that isslidably provided can be preferably returned to the position apart fromthe probe card 4. Thus, after the completion of alignment, the wafer 5aligned with the probe card 4 can be moved with the wafer tray 6 toanother inspection device, and desired inspection can be performed.Therefore, not only that the inspection can be carried out on ahigher-functional temperature adjustment system but also that theoperating ratio of the inspection device can be increased.

(Semiconductor Wafer Inspection Method)

Hereinafter, a semiconductor wafer inspection method using the probecards according to the first example embodiment, the second exampleembodiment, and the modification thereof will be described withreference to FIG. 5.

As shown in FIG. 5, in a step S01, the wafer 5 is placed on the waferstage 11. On the wafer 5, a plurality of semiconductor chips, includingsemiconductor integrated circuits, each to be inspected are formed.

Simultaneously with the step, in a step S02, the probe card 4 isattached to the probe card holding mechanism 42.

Next, in a step S03, a pad electrode (not shown) of each semiconductorchip formed on the wafer 5 and the contact terminal 41 formed on theprobe card 4 are aligned. Thereafter, by raising the wafer stage 11, thewafer 5 is brought close to or pressed against the probe card 4 to bringthe probe card 4 and the wafer 5 into close contact with each other.Since, in the first example embodiment, the seal ring holding member 12does not have a driving mechanism, a sealed space is formed by the waferstage 11, the probe card 4, and the seal ring 13 in the step S03.

Next, in the case of the second example embodiment, in a step SO4, byraising the seal ring holding member 12 provided on the periphery of thewafer 5 in the wafer stage 11 and holding the seal ring 13 to be broughtclose to the probe card 4, the seal ring 13 is brought into closecontact with the probe card 4. Thus, a sealed space is formed by thewafer stage 11, the probe card 4, and the seal ring 13.

Next, in a step S05, the pressure of the formed sealed space is reduced.Thus, each contact terminal 41 of the probe card 4 certainly contactsthe pad electrode of the wafer 5 to achieve electrical conduction.

Also in the second example embodiment, in the step S03, the seal ringholding member 12 may be elevated to bring the seal ring 13 into closecontact with the probe card 4.

In the first example embodiment, the internal pressure of the sealedspace may be reduced in the step S03. During the step, it is preferableto gradually increase the degree of reducing the pressure in accordancewith the elevation of the wafer stage 11.

Thus, the probe card 4 and the wafer 5 that are mutually aligned andcertainly contacted are connected to a tester chip having an inspectionfunction provided on the probe card 4 or a tester provided outside theprobe card 4, and desired inspection is performed.

As described above, in the inspection method, the probe card 4 and thewafer stage 11 are mutually drawn near by the differential pressurebetween the reduced pressure of the sealed space between the wafer 5 andthe probe card 4 and the atmospheric pressure. As a result, the contactterminal 41 of the probe card 4 is pressed against the pad electrode ofthe wafer 5 to achieve mutual electrical connection. During the step,when the wafer stage 11 is pressed against the probe card 4, the forceproduced by pressing the wafer stage 11 is added to the pressing forcegenerated by the differential pressure with the atmospheric pressure.Thus, a more certain pressing force can be obtained. Thus, after thestep, given inspection can be immediately started.

Third Example Embodiment

Hereinafter, a wafer inspection device according to a third exampleembodiment will be described with reference to the drawings.

First, a probe card for use in the wafer inspection device according tothe third example embodiment will be described using FIG. 6.

As shown in FIG. 6, a probe card 4A to be used in the third exampleembodiment has a wiring substrate 47 having a plurality of wirings 47 aformed therein and a penetration hole 48 penetrating in thefront-to-back direction, a thin film substrate 49 having a plurality ofcontact terminals 41 electrically contacting a plurality of padelectrodes 51 formed on the wafer 5, respectively, and ananisotropically conductive sheet 40 containing an elastic materialconducting only in a pressing direction between the wiring substrate 47and the thin film substrate 49.

Here, on the thin film substrate 49, a non-contact pattern 46 is formedthat transmits and receives desired signals by capacitive coupling orinductive coupling to/from a semiconductor integrated circuit formed onthe wafer 5. The anisotropically conductive sheet 40 conducts each ofthe contact terminals 41 and the non-contact pattern 46 and each of thepad electrodes 51 only in the pressing direction.

Between the wiring substrate 47 and the thin film substrate 49, a firstsealed space 45 can be formed by closing the penetration hole 48.

FIG. 7 shows a pressure regulating mechanism of a wafer inspectiondevice that performs inspection using the probe card 4A described withreference to FIG. 6.

The probe card 4A is provided with a first internal pressure regulatingpipe 35 connected to the penetration hole 48 and a first pressureregulating valve 37 connected to the end opposite to the probe card 4Ain the first internal pressure regulating pipe 35. The first pressureregulating valve 37 can adjust the first internal pressure in the firstsealed space 45 formed between the probe card 4A and the thin filmsubstrate 49.

The seal ring holding member 12 is provided with a second pressureregulating pipe 14 connected to the second sealed space 44 formed by thewafer stage 11, the probe card 4A, and the seal ring 13 and a secondpressure regulating valve 38 connected to the end opposite to the sealring holding member 12 in the second internal pressure regulating pipe14.

Furthermore, the first internal pressure regulating pipe 35 and thesecond internal pressure regulating pipe 14 are connected to each otherby the pressure short-circuiting switch 36. In general, the pressureshort-circuiting switch 36 can conduct the first internal pressureregulating pipe 35 and the second internal pressure regulating pipe 14by a negative electrical signal to make the pressure each of the pipesthe same. The pressure short-circuiting switch 36 can also be madenon-conductive by other electrical signals. When made non-conductive,the pressure can be independently adjusted by the pressure regulatingvalves 37 and 38. Accordingly, it is preferable that the pressureregulating valves 37 and 38 can mutually independently change a givenpressure value by electrical signals.

Thus, in the probe card 4A, each of the contact terminals 41 formed onthe probe card 4A can be pressed against each of the pad electrodes 51formed on the wafer 5 and the pressure of the first sealed space 45 canbe made higher than the pressure of the second sealed space 44. As aresult, the thin film substrate 49 can be expanded to the wafer 5 tocontact the non-contact pattern 46. Thus, the electromagnetic couplingin the non-contact pattern 46 becomes strong. Therefore, more stablenon-contact communication of electrical signals can be performed.

First Modification of Third Example Embodiment

FIG. 8 shows a first modification of the third example embodiment.

The first pressure regulating valve 37 connected to the first pressureregulating pipe 35 shown in FIG. 7 may be a differential pressureregulating valve 39 that regulates the pressure of the second sealedspace 44 to have a given differential pressure as shown in FIG. 8.

Thus, the pressure of the first sealed space 45 is automaticallyadjusted to a preset differential pressure. As a result, even when thepreset value of the second pressure regulating valve 38 is changed to bea given contact terminal pressure according to the number of the contactterminals 41 of the probe card 4A, the preset value of the differentialpressure regulating valve 39 is not required to be changed with eachchange in the preset value, and thus artificial operation mistakes canbe prevented.

As described above, according to the wafer inspection device and thesemiconductor wafer inspection method using the same according to thedisclosure, when electrical measurement is performed by contacting asemiconductor wafer on which an integrated circuit is formed, a highload value can be obtained by utilizing a differential pressure with theatmospheric pressure. By combining former pressurization methods, ahigher load can be obtained, and the inspection using a probe cardhaving a larger number of terminals can be stably performed. Moreover,the wafer inspection device and the semiconductor wafer inspectionmethod using the same according to the disclosure are also useful forcollectively inspecting semiconductor wafers.

1. A wafer inspection device, which inspects electrical properties of asemiconductor wafer on which a semiconductor integrated circuit isformed, the wafer inspection device comprising: a holding mechanism forholding a probe card that performs electrical inspection for thesemiconductor wafer; a wafer stage that holds the semiconductor wafer onthe upper surface and is movably provided; and a pressing mechanism thataligns the probe card and the semiconductor wafer that are held andpress the wafer stage against the probe card, wherein the wafer stage isprovided on the outer periphery with a seal ring that forms a sealedspace between the wafer stage and the probe card; and the seal ringforms the sealed space in a state where the wafer and the probe card arebrought close to each other by contacting the probe card and is providedin such a manner as to reduce the pressure of the sealed space.
 2. Thewafer inspection device of claim 1, wherein the seal ring is movablyprovided on the wafer stage in a direction perpendicular to theprincipal surface of the probe card.
 3. The wafer inspection device ofclaim 2, wherein the movable range of the seal ring is in the range of aposition spaced apart in the direction toward the side opposite to theprobe card relative to the semiconductor wafer and a position closer tothe probe card than the semiconductor wafer in the wafer stage.
 4. Thewafer inspection device of claim 2, wherein the seal ring is movablyprovided according to the inclination of the principal surface of theprobe card and is movably provided also in a direction perpendicular tothe principal surface of the probe card in such a manner as to beadhered to the probe card due to the differential pressure between thepressure of the sealed space and the atmospheric pressure of the outsideof the sealed space by reducing the pressure of the sealed space.
 5. Thewafer inspection device of claim 2, further comprising: a wafer trayremovably provided on the wafer stage, wherein the seal ring isreturnably provided at a position spaced apart from the probe card onthe wafer stage.
 6. A wafer inspection device, which inspects electricalproperties of a semiconductor wafer on which a semiconductor integratedcircuit is formed using a probe card, the probe card having a thin filmsubstrate on which an electrode for contact and a non-contact probepattern using capacitive coupling or inductive coupling are formed andbeing formed so that the pressure of a first sealed space constituted bymutually facing surfaces of the probe card and the thin film substratecan be controlled; the wafer inspection device comprising: a wafer stagethat holds the semiconductor wafer on the upper surface and is movablyprovided; and a mechanism for aligning the probe card and thesemiconductor wafer, wherein the wafer stage is provided on the outerperiphery with a seal ring that forms a second sealed space between thethin film substrate and the semiconductor wafer by bringing thesemiconductor wafer close to the probe card or pressing thesemiconductor wafer close against the probe card; and the pressure ofthe first sealed space and the pressure of the second sealed space canbe independently reduced.
 7. The wafer inspection device of claim 6,further comprising: a pressure short-circuiting switch mechanism thatmakes the pressure of the first sealed space and the pressure of thesecond sealed space the same; and a plurality of pressure control valvesthat independently control each of the first sealed space and secondsealed space.
 8. The wafer inspection device of claim 7, wherein amongthe plurality of the pressure control valves, the pressure control valveconnected to the first sealed space controls the pressure of the firstsealed space in such a manner as to make the pressure of the firstsealed space and the pressure of the second sealed space different fromeach other.
 9. A semiconductor wafer inspection method for inspectingelectrical properties of a semiconductor wafer on which a semiconductorintegrated circuit is formed using a probe card, the semiconductor waferinspection method comprising the steps of: (a) holding the semiconductorwafer on a wafer stage; (b) aligning each electrode of the semiconductorwafer and the probe card after the step (a); (c) bringing thesemiconductor wafer close to the probe card or pressing thesemiconductor wafer against the probe card after the step (b); (d)bringing a seal ring provided on the outer periphery of the wafer stageinto contact with the wafer stage in or after the step (c) to form asealed space defined by at least the probe card, the upper surface ofthe wafer stage, and the seal ring; and (e) reducing the pressure of thesealed space after the step (d).